Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2007-04-17
2007-04-17
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257SE23021, C257SE23025, C257SE23024, C257SE23078, C257SE25011, C257SE25029, C257S784000, C257S735000, C257S762000, C257S737000, C257S738000, C257S690000
Reexamination Certificate
active
11283044
ABSTRACT:
A bond pad structure which includes an aluminum bond pad which include one or more dopants that effectively control the growth of IMC to a nominal level in spite of high tensile stresses in the wafer. For example, aluminum can be doped with 1–2 atomic % of Mg. Alternatively, Pd or Si can be used, or elements like Cu or Si can be used as the dopant in order to reduce the overall tensile stresses in the wafer. This can control the abnormal growth of IMC, thus arresting the IMC crack formation. A combination of dopants can be used to both control the tensile stresses and also slightly alter the gold-Aluminum interface thus enabling a uniform and thin IMC formation. This tends to reduce or eliminate any voiding or cracking which would otherwise occur at the wire bond transfer.
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Bhatt Hemanshu
Kao Chi-yi
Pallinti Jayanthi
Sun Sey-Shing
Vijay Dilip
LSI Logic Corporation
Trexler, Bushnell Giangiorgi, Blackstone & Marr, Ltd.
Williams Alexander Oscar
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