Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-03-21
2006-03-21
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S720000
Reexamination Certificate
active
07015148
ABSTRACT:
The invention is a method of manufacturing a semiconductor device and such semiconductor device. The semiconductor device includes an integrated circuit pattern including a horizontal line, a vertical line and a space therebetween, the space including a precise width dimension. The method includes the steps of: forming a photosensitive layer to be patterned, patterning the photosensitive layer to form a pattern including a master horizontal line and a master vertical line without a space therebetween, transferring the pattern to at least one underlying layer using the patterned photosensitive layer, forming a second photosensitive layer over the patterned at least one underlying layer, patterning the second photosensitive layer to form a second pattern including a master space aligned to dissect a horizontal line and a vertical line formed in the at least one underlying layer, and transferring the second pattern to the at least one underlying layer to form a third pattern including a horizontal line and a vertical line with a space therebetween, the space including a precise width dimension.
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Claims from U.S. Appl. No. 10/852,876, Filing Date May 25, 2004.
Capodieci Luigi
Lukanc Todd P.
McGowan Sarah N.
Reiss Joerg
Spence Christopher A.
Advanced Micro Devices , Inc.
Everhart Caridad
Renner , Otto, Boisselle & Sklar, LLP
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