Redistribution process

Details Redistribution process Redistribution process

2005-03-15

2005-03-15

Thai, Luan (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S612000, C438S691000

Reexamination Certificate

active

06867122

ABSTRACT:
A redistribution process is described. A wafer is provided, wherein a first titanium layer, a first copper layer and a second titanium are sequentially formed over the surface of the wafer. The second titanium layer, the first copper layer and the first titanium layer are then defined to form a patterned trace layer. A patterned benzocyclobutene layer is then formed to expose the second titanium layer. The exposed second titanium layer is further removed to expose the first copper layer. Thereafter, a plurality of contacts is formed over the patterned benzocyclobutene layer and to connect with the first copper layer. Further, the wafer comprises a plurality of bonding pads, wherein each bonding pad is connected with each contact through the patterned trace layer.

REFERENCES:
patent: 6455408 (2002-09-01), Hwang et al.

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