Redistribution layer of wafer and the fabricating method...

Details Redistribution layer of wafer and the fabricating method... Redistribution layer of wafer and the fabricating method...

2006-12-19

2006-12-19

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C257S778000, C257S738000, C438S106000, C438S119000, C438S613000

Reexamination Certificate

active

07151012

ABSTRACT:
A wafer comprises a wafer, a conductor, a first passivation layer, a second passivation layer, a redistribution layer, and a third passivation layer. The conductor is disposed on the wafer. The first passivation layer covers the wafer, and exposes the surface of the conductor. The second passivation layer having an aperture is formed on the first passivation layer, and the aperture relatively to a pre-designed line exposes the surface of the conductor. The redistribution layer comprising a first and second metallic layer is formed in the aperture. The first metallic layer is disposed in the aperture. The second metallic layer peripherally covers the first metallic layer, and is connected to the inner wall of the aperture formed by the first passivation layer, second passivation layer and the conductor. The third passivation layer is formed on the second passivation layer and the first metallic layer of the redistribution layer.

REFERENCES:
patent: 6492198 (2002-12-01), Hwang

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