Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2008-05-27
2008-05-27
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE21211, C257SE21568, C438S455000, C438S458000, C438S761000
Reexamination Certificate
active
07378729
ABSTRACT:
A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.
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Akatsu Takeshi
Aulnette Cécile
Ghyselen Bruno
Le Vaillant Yves-Mathieu
Osternaud Bénédite
Le Dung A.
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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