Rectangular shaped laser diode and symmetrically inverted triang

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257 80, 257 84, 257 93, 257 96, 257 97, 257432, 257522, 359281, 359282, 372 43, 372 45, 372 50, H01L 2714, H01L 3100, H01L 29161, H01S 319

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052910571

ABSTRACT:
A compound semiconductor device and a process for manufacturing it is disclosed. The process comprises the steps of forming a first conduction type first clad layer, a first conduction type or second conduction type activated layer, a second conduction type second clad layer, and a second conduction type cap layer upon a first conduction type semiconductor substrate, forming a first conduction type electrode and a second conduction type electrode, and forming a rectangular pole shaped laser diode, a triangular pole shaped detecting photo-diode, and a triangular pole shaped receiving photo-diode by carrying out a single round of anisotropic etching. According to the present invention, the high density can be easily realized, so that the power consumption and the manufacturing cost can be saved.

REFERENCES:
patent: 4570172 (1986-02-01), Henry et al.
patent: 4675518 (1987-06-01), Oimura et al.
patent: 4736231 (1988-04-01), Ayabe et al.
patent: 4941146 (1990-07-01), Kobayashi
patent: 4989214 (1991-01-01), Kwa
patent: 5032879 (1991-07-01), Buchmann et al.
patent: 5091757 (1992-02-01), Yoshida
Anderson, G. W. et al. "High-Speed Planar GaAs Photoconductors with Surface Implant Layers," Appl. Phys. Lett. 53(4), Jul. 25, 1988, pp. 313-315.
IEEE Journal of Quantum Electronics, vol. 25, No. 11, of Nov. 1989.

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