Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S132000, C438S215000
Reexamination Certificate
active
07977230
ABSTRACT:
A repair fuse element and method of construction are disclosed that eliminate or substantially reduce the disadvantages and problems associated with prior fuse elements. In one embodiment, the fuse element is constructed with a rectangular-shaped contact. The contact is made long enough so that it makes contact at each end with a metal layer, but design rule spacing is still maintained between the connections with the metal layer. The overlapping areas between the rectangular contact and the metal layers are asymmetrical. Alternatively, these overlapping areas are smaller than the design rule overlap requirements. In a second embodiment, a fuse element is constructed with a plurality of rectangular-shaped contacts. As a result, a current value that is significantly lower than conventional fuse current values, can be used to melt such a contact or blow the fuse.
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Brady III Wade J.
Franz Warren L.
Nguyen Thinh T
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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