Recrystallized CMOS with different crystal planes

Details Recrystallized CMOS with different crystal planes Recrystallized CMOS with different crystal planes

1985-09-11

1988-08-30

Larkins, William D.

Fishing, trapping, and vermin destroying

357 237, 357 60, 437 57, 437 83, 437 93, 437173, H01L 2704

Patent

active

047680768

ABSTRACT:
A CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023), or of a plane azimuth close thereto (plane azimuth substantially in parallel with the above-mentioned planes), in order to increase the speed of operation.
At low temperatures, dependency of the carrier mobility upon the plane azimuth becomes more conspicuous as shown in FIG. 1, and the difference of mobility is amplified depending upon the planes. Therefore, employment of the above-mentioned crystalline planes helps produce a great effect when the CMOS device is to be operated at low temperature (e.g., 100.degree. K. or lower), and helps operate the device at high speeds.

REFERENCES:
patent: 3476991 (1969-11-01), Mize et al.
patent: 3603848 (1971-09-01), Sato et al.
patent: 3612960 (1971-10-01), Takeishi et al.
Kawamura et al., IEEE IEDM, Technical Digest, pp. 364-367, Dec. 4, 1983.
Gibbons et al., Applied Physics Letters, vol. 34, No. 12, Jun. 15, 1979, pp. 831-833.
Tsaur et al., Applied Physics Letters, vol. 40, No. 4, Feb. 15, 1982, pp. 322-324.

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