Recording medium comprising ferroelectric layer, nonvolatile...

Dynamic information storage or retrieval – Specific detail of information handling portion of system – Electrical modification or sensing of storage medium

Reexamination Certificate

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C369S100000, C369S283000, C369S286000

Reexamination Certificate

active

07599278

ABSTRACT:
A recording medium including a ferroelectric layer, a nonvolatile memory device including the recording medium and methods of wiring and reading data in the memory device. The recording medium includes: a lower electrode; a ferroelectric layer to which data is recorded, formed on the lower electrode; a barrier layer formed on the ferroelectric layer; and a semiconductor layer formed on the barrier layer. The nonvolatile memory device includes a probe that reads and writes the data. Furthermore, in the method of writing data, a writing voltage is applied between the probe, which contacts the semiconductor layer, and the lower electrode and, in the method of reading data, a state of a remanent polarization of the ferroelectric layer is determined by applying a reading voltage between the probe and the semiconductor layer.

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