Recordable electrical memory

Details Recordable electrical memory Recordable electrical memory

2007-09-14

2010-12-28

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S105000

Reexamination Certificate

active

07859883

ABSTRACT:
A memory device includes a plurality of memory cells each including a recordable layer between two metal layers, the recordable layer including a first sub-cell and a second sub-cell. Each memory cell is constructed and designed to change from an as-deposited state to an initialized state upon application of an initialization signal, from the initialized state to a first inscribed state upon application of a first write signal, and from the initialized state to a second inscribed state upon application of a second write signal. The memory cell has a resistor-like current-voltage (I-V) characteristic when in the as-deposited state, a diode-like I-V characteristic when in the initialized state, and resistor-like I-V characteristics when in the first and second inscribed states for voltages within a predetermined range.

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