Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-09-14
2010-10-12
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S100000, C365S105000
Reexamination Certificate
active
07813158
ABSTRACT:
A memory device includes memory cells each having a recordable layer between two metal layers, each memory cell being constructed and designed to change from a first state to a second state upon application of an initialization signal, and change from the second state to a third state upon application of a write signal. For a voltage within a specified range that is applied across the two metal layers, the memory cell has a lower resistance in the first state than in the second state, and has a higher resistance in the second state than in the third state.
REFERENCES:
patent: 5912839 (1999-06-01), Ovshinsky et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6066537 (2000-05-01), Poh
patent: 6584029 (2003-06-01), Tran et al.
patent: 6690597 (2004-02-01), Perlov et al.
patent: 7023014 (2006-04-01), Morimoto et al.
patent: 7486537 (2009-02-01), Scheuerlein et al.
patent: 2002/0190350 (2002-12-01), Kozicki et al.
patent: 2003/0003675 (2003-01-01), Hsu
patent: 2004/0062083 (2004-04-01), Layman et al.
patent: 2004/0161888 (2004-08-01), Rinerson et al.
patent: 2004/0223357 (2004-11-01), Gilton
patent: 2005/0036368 (2005-02-01), Yeh et al.
patent: 2005/0036386 (2005-02-01), Demone
patent: 2005/0058010 (2005-03-01), Thompson et al.
patent: 2005/0237783 (2005-10-01), Lee
patent: 2007/0015348 (2007-01-01), Hsu et al.
International Search Reportfor PCT/CN2007/07030, mailed Nov. 8, 2007 (6 pages).
Tolles “Nanonscience and nanotechnology in Europe,” In Nanotechnology, 7(2): 59-105 (1996).
U.S. Appl. No. 11/503,671, filed Aug. 14, 2006, Shuy et al.
Lai Hsin-Cheng
Shuy Geoffrey Wen-Tai
Auvinen Stuart T.
g Patent LLC
Hong Kong Applied Science and Technology Research Institute Co.
King Douglas
Nguyen Van-Thu
LandOfFree
Recordable electrical memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Recordable electrical memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Recordable electrical memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4196828