Recordable electrical memory

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S100000, C365S105000

Reexamination Certificate

active

07813158

ABSTRACT:
A memory device includes memory cells each having a recordable layer between two metal layers, each memory cell being constructed and designed to change from a first state to a second state upon application of an initialization signal, and change from the second state to a third state upon application of a write signal. For a voltage within a specified range that is applied across the two metal layers, the memory cell has a lower resistance in the first state than in the second state, and has a higher resistance in the second state than in the third state.

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