Reconfigurable semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S324000, C257S322000, C257SE29309, C438S591000, C438S266000

Reexamination Certificate

active

07968935

ABSTRACT:
A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.

REFERENCES:
patent: 2006/0197460 (2006-09-01), Lin et al.
patent: 2008/0001183 (2008-01-01), Kapoor
patent: 2009/0080245 (2009-03-01), Lutze et al.
patent: 2009/0250689 (2009-10-01), Colli
patent: 1020050084447 (2005-08-01), None
patent: 1020060042729 (2006-05-01), None
patent: 1020060053068 (2006-05-01), None
patent: 1020070090226 (2007-09-01), None
Korean Intellectual Property Office Notice of Decision to Grant Patent in Application No. 10-2008-0116502.

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