Recessing trench to target depth using feed forward data

Details Recessing trench to target depth using feed forward data Recessing trench to target depth using feed forward data

2008-05-20

2008-05-20

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S243000, C438S249000, C438S714000

Reexamination Certificate

active

07375034

ABSTRACT:
Recessing a trench using feed forward data is disclosed. In one embodiment, a method includes providing a region on a wafer including a trench area that includes a trench and a field area that is free of any trench, and a material applied over the region so as to fill the trench in the trench area and form a step between the trench area and the field area; etching to partially etch the trench; determining a target etch duration (tD) for etching to the target depth (DT); and etching the trench to the target depth (DT) for a period approximately equal to the target etch duration (tD). The target etch duration tDmay be fed forward for recessing another trench to the target depth DT. The method does not require a send ahead wafer, is fully compatible with conventional automated processes and provides in-situ etch time correction to each wafer.

REFERENCES:
patent: 5578161 (1996-11-01), Auda
patent: 6107135 (2000-08-01), Kleinhenz et al.
patent: 6916703 (2005-07-01), Chen et al.
patent: 2005/0070112 (2005-03-01), Pita et al.

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