Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-09-29
2011-11-15
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S437000, C438S702000, C257SE21429, C257SE21546
Reexamination Certificate
active
08058161
ABSTRACT:
A method of manufacturing a semiconductor device having shallow trench isolation includes steps of forming a hard mask layer on the substrate surface, etching a trench through the hard mask, filling the trench with an isolation material, forming a recessed trench, and forming a serpentine gate structure to connect electronic sources and drains.
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Barna Gabriel George
Kirkpatrick Brian K.
Marshall Andrew
Brady III Wade J.
Franz Warren L.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thomas Toniae
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