Recessed metallization

Details Recessed metallization Recessed metallization

1983-11-03

1985-04-02

Smith, John D.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

156643, 156644, 1566611, 156653, 427 88, 427 89, 427 90, 427 96, 427259, 430316, 430317, 430319, H01L 21312, H01L 21283

Patent

active

045088152

ABSTRACT:
An improved method of planarizing a level of metallization employs a trench in a smooth-surfaced dielectric and a sequence of etching steps to cut the trench locally down to the substrate, while forming the main metallization pattern at the same time.

REFERENCES:
patent: 4354897 (1982-10-01), Nakajima
patent: 4378383 (1983-03-01), Moritz
patent: 4439270 (1984-03-01), Powell
Perfect Planar Technology For VLSI'S, K. Ehara, et al., 1982 Symposium on VLSI.
Metal Lift-Off Process with a Self-Aligned Insulation Planarization, A. Hoeg, et al., IBM Technical Disclosure Bulletin, vol. 24, No. 9, Feb. 1982.

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