Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Lebentritt, Michael (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C430S239000
Reexamination Certificate
active
07994559
ABSTRACT:
A recessed-gate transistor device includes a gate electrode embedded in a gate trench formed in a semiconductor substrate, wherein the gate trench includes a vertical sidewall and a U-shaped bottom. A source region is provided at one side of the gate trench within the semiconductor substrate. A drain region is provided at the other side thereof. An asymmetric gate dielectric layer is formed between the gate electrode and the semiconductor substrate. The asymmetric gate dielectric layer has a first thickness between the gate electrode and the drain region and a second thickness between the gate electrode and the source region, wherein the first thickness is thicker than the second thickness.
REFERENCES:
patent: 5640034 (1997-06-01), Malhi
patent: 6815307 (2004-11-01), Hsu et al.
patent: 6872629 (2005-03-01), Hsiao
patent: 2002/0094622 (2002-07-01), Sneelal et al.
patent: 2007/0246755 (2007-10-01), Lee
patent: 2010/0264478 (2010-10-01), Rossi et al.
Lee Chung-Yuan
Lin Jeng-Ping
Wang Jer-Chyi
Wu Tieh-Chiang
Hsu Winston
Kusumakar Karen
Lebentritt Michael
Margo Scott
Nanya Technology Corp.
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