Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-05-24
2011-05-24
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S257000, C257SE21415
Reexamination Certificate
active
07947543
ABSTRACT:
Embodiments of a manufacturing process for recessed gate devices on silicon-on-insulator (SOI) substrate with self-aligned lateral isolation are described. This allows the creation of true in-pitch recessed gate devices without requiring an extra isolation dimension. A lateral isolation trench is formed between pairs of recessed gate devices by etching the silicon-on-insulator area down to a buried oxide layer on which the silicon-on-insulator layer is formed. The position of the trench is self-aligned and defined by the gate width and the dimension of spacers disposed on either side of the gate. The isolation trench is filled with a dielectric material and then etched back to the middle of the SOI body and the remaining volume is filled with a doped conductive material. The doped conductor is subject to a thermal cycle to create source and drain regions of the device through out-diffusion of the doped material.
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Ghyka Alexander G
Hunton & Williams LLP
Micro)n Technology, Inc.
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