Recessed-gate MOSFET with out-diffused source/drain extension

Details Recessed-gate MOSFET with out-diffused source/drain extension Recessed-gate MOSFET with out-diffused source/drain extension

1998-08-19

2000-07-25

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257333, 257334, H01L 2976

Patent

active

060939478

ABSTRACT:
The present invention relates to a recessed channel/gate MOSFET structure which comprises a semiconductor wafer having a plurality of shallow trench isolation regions embedded therein, wherein between each adjacent shallow trench isolation region is a field effect transistor region which comprises a source and drain region which are spaced apart by a gate region, said gate region comprising a poly gate region which is positioned between oxide spacers, said poly gate region having a metal contact region on its top surface and a gate oxide region on its bottom surface embedded in said semiconductor wafer and wherein said source and drain regions have an extension which wraps around said oxide spacers and provides a connection with a channel region which is formed below said gate oxide region.

REFERENCES:
patent: 5472897 (1995-12-01), Hsu et al.
patent: 5489792 (1996-02-01), Hu et al.
patent: 5599728 (1997-02-01), Hu et al.
patent: 5747373 (1998-05-01), Yu
patent: 5780340 (1998-07-01), Gardner et al.

Affiliated with

Also associated with

Rating

Recessed-gate MOSFET with out-diffused source/drain extension does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Recessed-gate MOSFET with out-diffused source/drain extension, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Recessed-gate MOSFET with out-diffused source/drain extension will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1338348