Recessed channel array transistor (RCAT) structures

Details Recessed channel array transistor (RCAT) structures Recessed channel array transistor (RCAT) structures

2011-03-01

2011-03-01

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S407000, C438S589000

Reexamination Certificate

active

07898023

ABSTRACT:
Recessed channel array transistor (RCAT) structures and method of formation are generally described. In one example, an electronic device includes a semiconductor substrate, a first fin coupled with the semiconductor substrate, the first fin comprising a first source region and a first drain region, and a first gate structure of a recessed channel array transistor (RCAT) formed in a first gate region disposed between the first source region and the first drain region, wherein the first gate structure is formed by removing a sacrificial gate structure to expose the first fin in the first gate region, recessing a channel structure into the first fin, and forming the first gate structure on the recessed channel structure.

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