Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2009-05-04
2011-10-04
Dang, Phuc (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S270000, C257S368000
Reexamination Certificate
active
08030197
ABSTRACT:
Embodiments of the invention relate to a method of fabricating logic transistors using replacement metal gate (RMG) logic flow with modified process to form recessed channel array transistors (RCAT) on a common semiconductor substrate. An embodiment comprises forming an interlayer dielectric (ILD) layer on a semiconductor substrate, forming a first recess in the ILD layer of a first substrate region, forming a recessed channel in the ILD layer and in the substrate of a second substrate region, depositing a first conformal high-k dielectric layer in the first recess and a second conformal high-k dielectric layer in the recessed channel, and filling the first recess with a first gate metal and the recessed channel with a second gate metal.
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Dewey Gilbert
Doyle Brian S.
Lindert Nick
Pillarisetty Ravi
Shah Uday
Dang Phuc
Intel Corporation
Winkle, PLLC
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