Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-11-30
2011-10-11
Sarkar, Asok K (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29201, C257SE29262
Reexamination Certificate
active
08035160
ABSTRACT:
Semiconductor memory devices having recessed access devices are disclosed. In some embodiments, a method of forming the recessed access device includes forming a device recess in a substrate material that extends to a first depth in the substrate that includes a gate oxide layer in the recess. The device recess may be extended to a second depth that is greater that the first depth to form an extended portion of the device recess. A field oxide layer may be provided within an interior of the device recess that extends inwardly into the interior of the device recess and into the substrate. Active regions may be formed in the substrate that abut the field oxide layer, and a gate material may be deposited into the device recess.
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English translation of Korean Office Action dated Mar. 17, 2011.
Beigel Kurt D.
Duesman Kevin G.
Trivedi Jigish D.
Micro)n Technology, Inc.
Sarkar Asok K
Wells St. John P.S.
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