Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-16
2007-01-16
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
10968599
ABSTRACT:
An inner spacer is formed in a sidewall of a gate in contact with a first active region that is electrically connected to an upper capacitor, thereby reducing a gate induced drain leakage (GIDL). A structure of a recess gate transistor includes a gate insulation layer, a gate electrode, a first gate spacer, a second gate spacer and source/drain regions. The gate insulation layer is formed within a recess. The gate electrode is surrounded by the gate insulation layer and is extended from within the recess. The first gate spacer is spaced with a predetermined distance horizontally with a portion of the gate insulation layer, being formed in a sidewall of the gate electrode. The second gate spacer is formed in another part of the sidewall of the gate electrode. The source/drain regions are formed mutually oppositely on first and second active regions with the gate electrode therebetween.
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Hafiz Mursalin B.
Le Thao X.
Marger & Johnson & McCollom, P.C.
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