Real-time S-parameter imager

Details Real-time S-parameter imager Real-time S-parameter imager

2004-07-14

2008-09-02

Vanore, David (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Including a radioactive source

C250S309000

Reexamination Certificate

active

07420166

ABSTRACT:
Disclosed is a fully automated system capable of producing high quality real-time S-parameter images. It is a useful and versatile tool in Material Science and Solid State Technology for determining the location of subsurface defect types and concentrations in bulk-materials as well as thin-films. The system is also useful in locating top surface metallizations and structures in solid state devices. This imaging system operates by scanning the sample surface with either a small positron source (22Na) or a focused positron beam. The system also possesses another two major parts, namely electronic instrumentation and stand-alone imaging software. In the system, the processing time and use of system resources are constantly monitored and optimized for producing high resolution S-parameter image of the sample in real time with a general purpose personal computer. The system software possesses special features with its embedded specialized algorithms and techniques that provide the user with adequate freedom for analyzing various aspects of the image in order to obtain a clear inference of the defect profile while at the same time keeping automatic track on the instrumentation and hardware settings. The system is useful for semiconductor and metal samples, giving excellent quality images of the subsurface defect profile and has applications for biological samples.

REFERENCES:
patent: 3825759 (1974-07-01), Hall
patent: 4064438 (1977-12-01), Alex et al.
patent: 6043489 (2000-03-01), Tongbhoyai et al.
Djourelov, N et al., Source Correction in Positron Annihilation Lifetime Spectroscopy, 1996, J.Phys:Condens. Matter, vol. 8, pp. 2081-2087.
Mantl, S., et al.; “Defect annealing studies on metals by positron annihilation and electrical resistivity measurements”; Physica Review B; vol. 17(4); Feb. 15, 1978; pp. 1645-1652.
Dlubek, G., et al.; “Positron study of native vacancies in doped and undoped GaAs”; J. Phys. C: Solid State Phys.; vol. 19; 1986; pp. 331-344.
Coleman, Paul; “Positron Depth Profiling”; Materials Science Forum vols. 363-365; 2001; p. 420-424.
Männig, U., et al.; “Defect production by the TEM beam—the first application of the positron microprobe”; Applied Surface Science; vol. 149; 1999; pp. 217-220.
Kraus-Rehberg, R., et al.; “Positron Annihilation in Semiconductors”; Springer; 1999; p. 201.
Scanning electron microscope, Wikipedia, pp. 1-9.
Schultz, Peter J., et al., “Interation of positron beams with surfaces, thin films, and interfaces,” Review s of Modern Physics, vol. 60, No. 3, Jul. 1988, pp. 701-781.

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