Real-time gate etch critical dimension control by oxygen...

Details Real-time gate etch critical dimension control by oxygen... Real-time gate etch critical dimension control by oxygen...

2007-08-28

2007-08-28

Toledo, Fernando L. (Department: 2823)

Metal working

Barrier layer or semiconductor device making

Reexamination Certificate

active

10675572

ABSTRACT:
A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined reference value and the flow of etchant gas into the chamber is controlled in response thereto.

REFERENCES:
patent: 5500076 (1996-03-01), Jerbic
patent: 5702562 (1997-12-01), Wakahara
patent: 5770097 (1998-06-01), O'Neill et al.
patent: 6245581 (2001-06-01), Bonser et al.
patent: 6294465 (2001-09-01), Hernandez et al.
patent: 6368879 (2002-04-01), Toprac
patent: 6461878 (2002-10-01), Lansford
patent: 6465356 (2002-10-01), Kim et al.
patent: 3181127 (1991-08-01), None
patent: 5036642 (1993-02-01), None
patent: 5136098 (1993-06-01), None
patent: 6275562 (1994-09-01), None
patent: 9129599 (1997-05-01), None

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