Real-time analysis and control of melt-chemistry in crystal grow

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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422245, 422249, B01J 1718

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active

041347854

ABSTRACT:
To improve the control over resistivity of grown single crystalline ingots, to reduce the turn-around time between growth of successive ingots in a particular crystal grower and to enable recycling of otherwise junk material, a sample of a molten material (the "melt") from which the ingot is to be grown is withdrawn from the crystal grower, cooled, and analyzed. Based on the analysis, controlled additional amounts of the material and/or a dopant impurity are added directly to the melt to restore it to a desired chemical composition. Thus, avoidable is costly and time-consuming cooling of the melt and restarting the system with a completely new charge of material and impurity, and achievable is uniformity of resistivity among the successively grown ingots. Preferably the sample is withdrawn from the melt into a quartz tube which is inserted into the system through a port. The sample is rapidly cooled and solidified and inserted into a waveguide system where a microwave absorption measurement provides a number which is readily converted into resistivity of the sample, and then, into doping level of the melt.

REFERENCES:
patent: 3103627 (1963-09-01), Schneider
patent: 3354723 (1967-11-01), Smith
patent: 3582778 (1971-06-01), Faukner
patent: 3859857 (1975-01-01), Falk
patent: 3905238 (1975-09-01), Falk
IEEE Trans. on Instrumentation and Measurement 12/64 Bichara et al. pp. 323-328.
Proc. of the IRE, 5/61, Jacobs et al., pp. 928-932.
1962 IRE Cov., Jacobs et al., pp. 30-42.
Journal of Physics E Scientific Instruments, 12/72, Nancollas et al., pp. 1186-1189.

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