Reagent source

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156610, 156611, 156613, 156614, 156DIG61, 156DIG70, C30B 2516

Patent

active

052501353

ABSTRACT:
A method of providing a reagent into a chemical process said provision being in the vapor phase and at a controlled mass flow rate wherein the method comprises:

REFERENCES:
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patent: 4533410 (1985-08-01), Ogura et al.
Journal of The Chemical Society, Faraday Transactions I, 1973 vol. 69, "Growth of Crystals from the Gas Phase" by Faktor et al, pp. 1916-1925.
Journal of The Chemical Society, Faraday Transactions I, 1974 vol. 70, "Modified Entrainment Method for Measuring Vapour Pressures and Heterogeneous Equilibrium Constants" Parts 1-4 pp. 2267-2312.
Solid State Devices 1982, ESSDERC-SSSDT Meeting, Munich, Sep. 13-16th, 1982, pp. 51-72, A. Goetzberger and M. Zerbst, Weinheim, Del.
J. Hallais: "Metal organic vapour phase epitaxy: the key issues" pp. 53-56: Chemistry of the growth and reactor design.
Moss et al, "A New Approach To MOCVD of Indium Phosphide and Gallium-Indium Arsenside", Journal of Crystal Growth, vol. 55 (1981) pp. 129-134.
Moss, "Adducts in the Growth of III-V Compounds", Journal of Crystal Growth, vol. 68 (1984) pp. 78-87.
Moore et al., "High Mobility InP Epitaxial Layers Prepared . . . ", Journal of Crystal Growth, vol. 77 (1986) pp. 19-22.
Fakter et al, "Growth of Crystals From The Gaspaase, Part 4, Growth of Gallium Arsenide". . . , N.R.I.S.I., British Museum, Nov. 27, 1973, pp. 1915, 1917, 1926 and 1923 to 1925.

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