Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2007-03-30
2009-08-25
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S189090, C365S210100, C365S207000
Reexamination Certificate
active
07580297
ABSTRACT:
A multi-level sensing scheme compares the state of a multi-level storage cell with monotonously changing reference states, which are associated to different information values. That particular information value is identified to be the information stored in the multi-level storage cell, which has associated that reference state which, in a changing direction, firstly exceeds the state.
REFERENCES:
patent: 5796273 (1998-08-01), Jung et al.
patent: 7142464 (2006-11-01), Dadashev
patent: 7324381 (2008-01-01), Gallo et al.
patent: 2003/0214867 (2003-11-01), Goldman et al.
patent: 2006/0002172 (2006-01-01), Venkataraman et al.
patent: 0 744 753 (1996-11-01), None
Nirschl Thomas
Otterstedt Jan
Infineon - Technologies AG
Lam David
Slater & Matsil L.L.P.
LandOfFree
Readout of multi-level storage cells does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Readout of multi-level storage cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Readout of multi-level storage cells will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4125160