Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-03-05
2009-08-18
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S148000, C365S189011, C365S189070, C977S933000
Reexamination Certificate
active
07577018
ABSTRACT:
In an example, a determination circuit5determines whether an input waveform is a first waveform (=0) or a second waveform (=1). When magnetization switching is caused during writing, the second waveform (=1) having a large voltage change is outputted, and thus the determination circuit5determines that the output waveform is the second waveform, using threshold determination or the like. In another example, when an initial voltage V1agrees with a voltage V2stored by intentionally writing “0”, “0” is outputted; when V1disagrees with V2, “1” is outputted. In the disagreement case, the written data is rewritten into the original data “1.”
REFERENCES:
patent: 2004/0083328 (2004-04-01), Gogl et al.
patent: 2004/0100855 (2004-05-01), Saito et al.
patent: 2004/0130936 (2004-07-01), Nguyen et al.
patent: 2004/0160811 (2004-08-01), Tsuchida
patent: A 2001-266567 (2001-09-01), None
patent: A 2001-325791 (2001-11-01), None
patent: A 2002-533863 (2002-10-01), None
patent: WO 00/38192 (2000-06-01), None
Feasibility of Ultra-Dense Spin-Tunneling Random Access Memory, Wang et al., IEEE Transactions on Magnetics, vol. 33, No. 6, Nov. 1997.
Spintronics—A Retrospective and Perspective, Wolf et al., IBM Journal of Research and Development, vol. 50, No. 1, Jan. 2006.
Byrne Harry W
Dinh Son
Oliff & Berridg,e PLC
TDK Corporation
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