Readout circuit for semiconductor memory device based on a...

Details Readout circuit for semiconductor memory device based on a... Readout circuit for semiconductor memory device based on a...

2006-11-07

2006-11-07

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S189070, C365S236000

Reexamination Certificate

active

07133312

ABSTRACT:
By a first readout, the current input from a selected cell is converted by a preamplifier and a voltage-controlled oscillator into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter to be stored in a readout value register. The selected cell is then written to one of two storage states, and a second readout is performed. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in the readout value register and a reference value stored in a reference value register.

REFERENCES:
patent: 6205073 (2001-03-01), Naji
patent: 6317376 (2001-11-01), Tran et al.
patent: 2005/0024950 (2005-02-01), Sakimura et al.
patent: 2001-32591 (2001-11-01), None
patent: 2002-32983 (2002-01-01), None
patent: WO 01/24185 (2001-04-01), None

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