Reading threshold switching memory cells

Details Reading threshold switching memory cells Reading threshold switching memory cells

2011-01-25

2011-01-25

Mai, Son L (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S208000

Reexamination Certificate

active

07876607

ABSTRACT:
Using the voltage across a threshold switching cell to sense the state of the cell, rather than sensing current through the cell, may result in a faster read. In some embodiments, current consumption during reading of conductive states may be reduced by using a capacitor coupled across the cell.

REFERENCES:
patent: 7505334 (2009-03-01), Breitwisch et al.
patent: 7672176 (2010-03-01), Chiang et al.
patent: 2008/0316847 (2008-12-01), Lin et al.
patent: 2009/0116280 (2009-05-01), Parkinson et al.
patent: 2009/0147565 (2009-06-01), Lowrey

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