Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2007-10-09
2007-10-09
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S113000, C365S148000
Reexamination Certificate
active
11105829
ABSTRACT:
A phase change memory may be read so as to reduce the likelihood of a read disturb. A read disturb may occur, for example, when a reset device is raised to a voltage, which causes its threshold device to trigger. The triggering of the threshold device produces a displacement current which may convert a reset device to a set device. By ensuring that the reset cell never reaches a voltage that would result in triggering of the threshold device, read disturbs may be reduced.
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Czubatyj Wolodymyr
Kostylev Sergey A.
Lowrey Tyler Arthur
Parkinson Ward D.
Dinh Son
Nguyen Hien N
Ovonyx Inc.
Trop Pruner & Hu P.C.
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