Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2005-03-30
2009-02-24
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
Reexamination Certificate
active
07495944
ABSTRACT:
A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
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Bedeschi Ferdinando
Casagrande Giulio
Gastaldi Roberto
Parkinson Ward D.
Resta Claudio
Hoang Huan
Ovonyx Inc.
Tran Anthan T.
Trop Pruner & Hu P.C.
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