Reading phase change memories

Details Reading phase change memories Reading phase change memories

2011-05-03

2011-05-03

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

Reexamination Certificate

active

07936584

ABSTRACT:
A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.

REFERENCES:
patent: 2005/0030787 (2005-02-01), Lowrey et al.
patent: 2005/0174826 (2005-08-01), Alexander
patent: 2006/0146600 (2006-07-01), Johnson

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