Reading method of a memory device with embedded...

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital data error correction

Reexamination Certificate

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Reexamination Certificate

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07908543

ABSTRACT:
A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A0, A1, . . . , ALS−1) to generate a first recovered string (S1), and performing a first decoding attempt using the first recovered string (S1). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S2-SN) is generated. On the basis of a comparison between the first recovered string (S1) and the second recovered string (S2-SN), a modified string (SM) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (SM).

REFERENCES:
patent: 6389571 (2002-05-01), Yang et al.
patent: 6990622 (2006-01-01), Davis et al.
patent: 0 305 987 (1989-03-01), None
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patent: 0 428 396 (1991-05-01), None
patent: 0 428 396 (1991-05-01), None
Carl E. W. Sundberg, Erasure and error decoding for semiconductor memories, Aug. 1978, IEEE, Trans. on Comp. vol. C-27, No. 8, p. 696-705.
European Search Report, EP 06 42 5141, dated Nov. 21, 2006.

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