Reading ferroelectric memory cells

Details Reading ferroelectric memory cells Reading ferroelectric memory cells

2005-04-19

2005-04-19

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C365S065000, C365S117000, C365S189011

Reexamination Certificate

active

06882560

ABSTRACT:
A first fraction of a programming voltage is applied to a first word line coupled to a control gate of a selected ferroelectric memory cell in an array of ferroelectric memory cells. A gate/source voltage equal to the programming voltage is sufficient to reverse polarity of each memory cell. A ground potential is applied to other word lines coupled to control gates of non-selected memory cells. The first fraction of the programming voltage is applied to a first program line coupled to a first source/drain region of the selected memory cell and to other program lines coupled to first source/drain regions of non-selected memory cells. A second fraction of the programming voltage is applied to a first bit line coupled to a second source/drain region of the selected memory cell and to other bit lines coupled to second source/drain regions of non-selected memory cells.

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