Reading device for EPROM memory cells with the operational field

Details Reading device for EPROM memory cells with the operational field Reading device for EPROM memory cells with the operational field

1991-07-05

1993-11-30

Mullins, James B.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365226, G11C 1140

Patent

active

052672026

ABSTRACT:
The device comprises a source bias generator suitable for conferring upon the EPROM cell during the reading step a source voltage that varies linearly with the power supply voltage so as to keep constant the voltage between gate and source of the above cell.

REFERENCES:
patent: 5025417 (1991-06-01), Miyamoto et al.

Affiliated with

Also associated with

Rating

Reading device for EPROM memory cells with the operational field does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reading device for EPROM memory cells with the operational field, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reading device for EPROM memory cells with the operational field will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2102885