Reading circuit for nonvolatile analog memories, in particular f

Static information storage and retrieval – Floating gate – Multiple values

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518518, 3651852, G11C 1604

Patent

active

060348887

ABSTRACT:
The reading circuit comprises a current source, which, via a current reflection circuit, supplies a constant predetermined current to a cell to be read, an operational amplifier with a non-inverting input connected to the drain terminal of the cell, and an output connected to the gate terminal of the cell. The source terminal of the cell is connected to ground. Thereby the output voltage of the operational amplifier supplies directly (at the set current) the threshold voltage of the cell, and the drain terminal of the cell is biased to a positive voltage.

REFERENCES:
patent: 5745414 (1998-04-01), Engh et al.
patent: 5808938 (1998-09-01), Tran et al.
patent: 5838612 (1998-11-01), Calligaro et al.
patent: 5946235 (1999-08-01), Kramer et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Reading circuit for nonvolatile analog memories, in particular f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reading circuit for nonvolatile analog memories, in particular f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reading circuit for nonvolatile analog memories, in particular f will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-369117

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.