Reading circuit and semiconductor memory device including...

Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge

Reexamination Certificate

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C365S189070

Reexamination Certificate

active

06944077

ABSTRACT:
A reading circuit for reading information stored in a memory cell includes a current supply circuit for supplying a current to a bit line connected to the memory cell; a comparison circuit for comparing a potential of the bit line supplied with the current by the current supply circuit with a reference potential so as to output the information stored in the memory cell; a disconnection circuit for electrically disconnecting the comparison circuit and the memory cell from each other under a prescribed condition; a charge circuit for charging the bit line, the charge circuit stopping charging of the bit line when the potential of the bit line exceeds a prescribed potential; and a discharge circuit for discharging the bit line when the potential of the bit line exceeds the prescribed potential.

REFERENCES:
patent: 5293088 (1994-03-01), Kasa
patent: 5490110 (1996-02-01), Sawada et al.
patent: 5559456 (1996-09-01), Hatsuda
patent: 2001-311493 (2000-07-01), None

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