Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2011-01-04
2011-01-04
Le, Vu A (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S210140
Reexamination Certificate
active
07864612
ABSTRACT:
A method for reading a bit of a memory cell in a non-volatile memory (NVM) cell array, the method comprising providing a memory cell comprising a bit to be read and at least one other bit not to be read, and reading the bit to be read with respect to a multi-bit reference cell, the reference cell comprising a first bit at a first non-ground programmed state and a second bit at a second non-ground programmed state. Compared with the prior art, the present invention may enable achieving an improved sensing accuracy together with improved read disturb immunity.
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Cohen Guy
Eitan Boaz
Lusky Eli
Maayan Eduardo
Eitan Mehulal Law Group
Le Vu A
Spansion Israel Ltd
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