Reading a phase change memory

Details Reading a phase change memory Reading a phase change memory

2010-11-04

2011-12-13

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

Reexamination Certificate

active

08077498

ABSTRACT:
A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.

REFERENCES:
patent: 2006/0146600 (2006-07-01), Johnson

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