Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2005-03-30
2008-11-18
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000
Reexamination Certificate
active
07453715
ABSTRACT:
A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.
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Ho Hoai V.
Ovonyx Inc.
Tran Anthan T
Trop Pruner & Hu P.C.
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