Reading a phase change memory

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S163000

Reexamination Certificate

active

07453715

ABSTRACT:
A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.

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Van Landingham, “Circuit Applications of Ovonic Switching Devices”, IEEE Transactions on Electron Devices, vol. ED-20, No. 2, Feb. 1973.

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