Read/write memory and cell constituting same

Details Read/write memory and cell constituting same Read/write memory and cell constituting same

1985-04-08

1987-03-31

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365154, G11C 1134

Patent

active

046548238

ABSTRACT:
A read/write memory cell comprises a first switch having one input which constitutes the data input-output of the cell and another input connected to a loop circuit comprises a first inverter, a second inverter and a second switch. The first and second switches are controlled in such a way that on a write operation the first is closed and the second open. In the absence of any write or read operation the first switch is open and the second switch is closed. On a read operation both switches are closed. A read/write memory of N words each of P bits is obtained by associating N.times.P cells of this kind in a matrix comprising N rows and P columns.

REFERENCES:
patent: 3644907 (1972-02-01), Gricchi et al.
patent: 3997881 (1976-12-01), Hoffmann
patent: 4134150 (1979-01-01), Shiga
IBM Technical Disclosure Bulletin, vol. 13, No. 7, Dec. 1970, Gaensslen and Terman, "FET Memory Cell", p. 1751.

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