Read/write elements for a three-dimensional magnetic memory

Details Read/write elements for a three-dimensional magnetic memory Read/write elements for a three-dimensional magnetic memory

2008-08-14

2010-10-26

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S130000, C365S157000, C365S158000, C365S171000

Reexamination Certificate

active

07821822

ABSTRACT:
Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.

REFERENCES:
patent: 3696348 (1972-10-01), Kobayashi
patent: 3878542 (1975-04-01), Myer

Affiliated with

Also associated with

Rating

Read/write elements for a three-dimensional magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Read/write elements for a three-dimensional magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read/write elements for a three-dimensional magnetic memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4216048