Read/write collison-free static random access memory

Details Read/write collison-free static random access memory Read/write collison-free static random access memory

1997-03-25

1998-11-03

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Simultaneous operations

36523003, G11C 700

Patent

active

058319069

ABSTRACT:
A read/write collision-free static random access memory which can perform read/write operations simultaneously without read/write collisions. The static random access memory includes a plurality of memory cells and its features are that the memory cells are divided into several memory banks wherein each bank has independent reading and writing paths. The number of memory cells for each memory bank can be determined by a specific length of memory cells between some memory cells undergoing reading operation and other memory cells undergoing writing operation, and by the reading speed of said reading operation and the writing speed of the writing operation, whereby the reading operation and the writing operation read and write to two different memory banks of the static random access memory at the same time such that read/write collisions can be prevented.

REFERENCES:
patent: 5638335 (1997-06-01), Akiyama et al.
patent: 5646695 (1997-07-01), Fujiwara et al.

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