Read/write circuit for accessing chalcogenide non-volatile...

Details Read/write circuit for accessing chalcogenide non-volatile... Read/write circuit for accessing chalcogenide non-volatile...

2006-08-29

2006-08-29

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S113000

Reexamination Certificate

active

07099187

ABSTRACT:
A read/write circuit for accessing chalcogenide non-volatile memory cells is disclosed. The read/write circuit includes a chalcogenide storage element, a voltage limiting circuit, a current-to-voltage converter, and a buffer circuit. The voltage limiting circuit, which is coupled to the chalcogenide storage element, ensures that voltages across the chalcogenide storage element will not exceed a predetermined value during a read operation. During a read operation, the current-to-voltage converter, which is coupled to the voltage limiting circuit, converts a current pulse read from the chalcogenide storage element to a voltage pulse. By sensing the voltage pulse from the current-to-voltage converter, the buffer circuit can determine a storage state of the chalcogenide storage element.

REFERENCES:
patent: 5881002 (1999-03-01), Hamakawa
patent: 6493275 (2002-12-01), Tomita
patent: 6914828 (2005-07-01), Kono
patent: 6928022 (2005-08-01), Cho et al.
patent: 6930940 (2005-08-01), Haraguchi

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