Read/write circuit for accessing chalcogenide non-volatile...

Details Read/write circuit for accessing chalcogenide non-volatile... Read/write circuit for accessing chalcogenide non-volatile...

2005-11-15

2005-11-15

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S113000, C365S189011

Reexamination Certificate

active

06965521

ABSTRACT:
A read/write circuit for accessing chalcogenide non-volatile memory cells is disclosed. The read/write circuit includes a chalcogenide storage element, a voltage limiting circuit, a current-to-voltage converter, and a buffer circuit. The voltage limiting circuit, which is coupled to the chalcogenide storage element, ensures that voltages across the chalcogenide storage element will not exceed a predetermined value during a read operation. During a read operation, the current-to-voltage converter, which is coupled to the voltage limiting circuit, converts a current pulse read from the chalcogenide storage element to a voltage pulse. By sensing the voltage pulse from the current-to-voltage converter, the buffer circuit can determine a storage state of the chalcogenide storage element.

REFERENCES:
patent: 6049447 (2000-04-01), Roesch et al.
patent: 6687153 (2004-02-01), Lowrey
patent: 6807040 (2004-10-01), Baum et al.
patent: 6831856 (2004-12-01), Pashmakov
patent: 6879525 (2005-04-01), Van Brocklin et al.

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