Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-07-08
2008-07-08
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185200, C365S185210, C365S185030, C365S185190
Reexamination Certificate
active
07397702
ABSTRACT:
A read/verify circuit for multilevel memory cells includes: a read terminal selectively connectable to a plurality of array cells, having respective array threshold voltages; a plurality of reference cells, having respective reference threshold voltages; and a plurality of threshold-detection circuits, for detecting the array thresholds and the reference thresholds. In particular, the read terminal and the reference cells are each connected to a respective threshold-detection circuit. Each threshold-detection circuit is provided with a respective detector element of a resistive type, set so as to be traversed by a current response to turning-on of the respective array cell or reference cell associated thereto.
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Pascucci Luigi
Rolandi Paolo
Hoang Huan
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.r.l.
Weinberg Michael
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