Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2005-07-19
2005-07-19
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S225700, C365S185090
Reexamination Certificate
active
06920070
ABSTRACT:
At a Power-On time, a read potential is generated by a VBP generating circuit (Power-On). The read potential is applied as VBP to a program element to check the state of the program element. The read potential is produced from, e.g. a logic power supply potential. At a program time, a program potential is generated by a VBP generating circuit (Program). The program potential is supplied, for example, from the outside of the chip. The program potential is applied as VBP to the program element. While the read/program potential is being output, the gate of a barrier transistor is supplied with VBT, e.g. a power supply potential.
REFERENCES:
patent: 6278651 (2001-08-01), Weinfurtner et al.
patent: 6327178 (2001-12-01), Blodgett
patent: 6333667 (2001-12-01), Lee
patent: 6400632 (2002-06-01), Tanizaki et al.
patent: 6496418 (2002-12-01), Kawahara et al.
patent: 2001-67893 (2001-03-01), None
patent: 2002-203901 (2002-07-01), None
Elms Richard
Kabushiki Kaisha Toshiba
Nguyen Tuan T.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
Read/program potential generating circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Read/program potential generating circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read/program potential generating circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3410313