Read operation for non-volatile storage that includes...

Details Read operation for non-volatile storage that includes... Read operation for non-volatile storage that includes...

2007-11-27

2007-11-27

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S189070

Reexamination Certificate

active

11616769

ABSTRACT:
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

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