Read-only semiconductor memory device

Details Read-only semiconductor memory device Read-only semiconductor memory device

1997-07-14

1999-04-06

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257317, H01L 29788

Patent

active

058922580

ABSTRACT:
An n-type drain diffusion layer, an n-type source diffusion layer and an n-type control gate diffusion layer are formed on the surface of a p-type semiconductor substrate. Furthermore, an n-type well is connected to the control gate diffusion layer. A control gate electrode of aluminum is connected to the well. An isolation oxide layer is formed between the control gate electrode and the control gate diffusion layer. A first insulation layer is formed on the drain diffusion layer, the source diffusion layer and the control gate diffusion layer. A floating gate is formed on the first insulation layer. The upper portion and the side portion of the floating gate are covered with a second insulation layer. The floating gate is completely covered with a protective gate through the second insulation layer. The end edge of the protective gate opposes the well through the isolation oxide layer. The drain diffusion layer and the protective gate are connected to each other to have the same potential.

REFERENCES:
patent: 4642673 (1987-02-01), Miyamoto et al.
patent: 5094968 (1992-03-01), Schumann et al.
patent: 5189497 (1993-02-01), Komori et al.

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